Compact Models for sub-22nm MOSFETs
نویسندگان
چکیده
FinFET and UTBSOI (or ETSOI) FET are the two promising multi-gate FET candidates for sub-22nm CMOS technology. The BSIM-CMG and BSIM-IMG are the surface potential based physical compact models for multi-gate MOSFETs. The BSIM-CMG model has been developed to model common symmetric double, triple, quadruple and surround gate MOSFET. The BSIM-IMG model has been developed to model independent double-gate MOSFET capturing threshold voltage variation with back gate bias. Both models have been verified by simulation /measurements and show excellent results for all types of real device effects like SCE, DIBL, mobility degradation, poly depletion, QME etc.
منابع مشابه
Drain Current Models for Single-Gate Mosfets & Undoped Symmetric & Asymmetric Double-Gate SOI Mosfets And Quantum Mechanical Effects: A Review
In this paper modeling framework for single gate conventional planar MOSFET and double gate (DG) MOSFETS are reviewed. MOS Modeling can be done by either analytical modeling or compact modeling. Single gate MOSFET technology has been the choice of mainstream digital circuits for VLSI as well as for other high frequency application in the low GHZ range. The major single gate MOS modeling methods...
متن کاملPerformance Analysis of FinFET Based Inverter circuit, NAND and NOR Gate at 22nm and 14nm Node technologies
The size of integrated devices such as PC, mobiles etc are reducing day by day with multiple operations, all of these is happening because of the scaling down the size of MOSFETs which is the main component in memory, processors and so on. As we scale down the MOSFETs to the nanometer regime the short channel effects arises which degrades the system performance and reliability. Here in this pap...
متن کاملNanoscale CMOS Modeling
Nanoscale CMOS Modeling by Mohan Vamsi Dunga Doctor of Philosophy in Engineering Electrical Engineering and Computer Sciences University of California, Berkeley Professor Ali M. Niknejad, Chair Since its inception almost four decades ago, the conventional planar bulk silicon MOSFET has been scaled relentlessly in accordance with the Moore’s Law. However, as the state-of-the-art MOSFET makes inr...
متن کاملCompact Quantum Mechanical Device Models for MOSFETs in Gigasc
In this paper, quantum mechanical effects on nanoscale MOSFET devices are investigated through compact physical models. These models cover quantum mechanical influences on device parameters including long-channel threshold voltage shift, gate capacitance degradation, deteriorated short channel effects and sub-threshold slope. In-depth understanding of device characteristic modification brought ...
متن کاملHiSIM-HV: A Scalable, Surface-Potential-Based Compact Model for High-Voltage MOSFETs
The main features of the industry standard compact model HiSIM-HV for high-voltage MOSFETs are described. The basis of HiSIM-HV is a consistent physically correct potential determination in the MOSFET core and the surrounding drift regions, providing the high-voltage capabilities. Consequently, HiSIM-HV can accurately calculate the physical potential distribution in the entire asymmetric LDMOS ...
متن کامل